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Huge magnetoresistance in topological insulator spin-valves at room temperature
Topological insulators (TI) have extremely high potential in spintronic applications. Here, a topological insulators thin-film (TITF) spin valve with the use of the segment gate-controlled potential exhibits a huge magnetoresistance (MR) value higher than 1000% at room temperature which is more than...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8175690/ https://www.ncbi.nlm.nih.gov/pubmed/34083654 http://dx.doi.org/10.1038/s41598-021-91242-y |
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author | Tseng, Peng Chen, Jyun-Wei Hsueh, Wen-Jeng |
author_facet | Tseng, Peng Chen, Jyun-Wei Hsueh, Wen-Jeng |
author_sort | Tseng, Peng |
collection | PubMed |
description | Topological insulators (TI) have extremely high potential in spintronic applications. Here, a topological insulators thin-film (TITF) spin valve with the use of the segment gate-controlled potential exhibits a huge magnetoresistance (MR) value higher than 1000% at room temperature which is more than 50 times the MR of typical topological insulators (TI) spin-valves. A high spin-polarized current is provided by the band structure generated by the tunable segment potential. The results reveal a very large resistance difference between the parallel and antiparallel configurations. The MR effect is strongly influenced by the thin-film thickness, the gate potential, the gate size, and the distribution. The proposed results will help to not only improve the room-temperature performance of the spin-valves but also enhance the applications of magnetic memories and spintronic devices. |
format | Online Article Text |
id | pubmed-8175690 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-81756902021-06-07 Huge magnetoresistance in topological insulator spin-valves at room temperature Tseng, Peng Chen, Jyun-Wei Hsueh, Wen-Jeng Sci Rep Article Topological insulators (TI) have extremely high potential in spintronic applications. Here, a topological insulators thin-film (TITF) spin valve with the use of the segment gate-controlled potential exhibits a huge magnetoresistance (MR) value higher than 1000% at room temperature which is more than 50 times the MR of typical topological insulators (TI) spin-valves. A high spin-polarized current is provided by the band structure generated by the tunable segment potential. The results reveal a very large resistance difference between the parallel and antiparallel configurations. The MR effect is strongly influenced by the thin-film thickness, the gate potential, the gate size, and the distribution. The proposed results will help to not only improve the room-temperature performance of the spin-valves but also enhance the applications of magnetic memories and spintronic devices. Nature Publishing Group UK 2021-06-03 /pmc/articles/PMC8175690/ /pubmed/34083654 http://dx.doi.org/10.1038/s41598-021-91242-y Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Tseng, Peng Chen, Jyun-Wei Hsueh, Wen-Jeng Huge magnetoresistance in topological insulator spin-valves at room temperature |
title | Huge magnetoresistance in topological insulator spin-valves at room temperature |
title_full | Huge magnetoresistance in topological insulator spin-valves at room temperature |
title_fullStr | Huge magnetoresistance in topological insulator spin-valves at room temperature |
title_full_unstemmed | Huge magnetoresistance in topological insulator spin-valves at room temperature |
title_short | Huge magnetoresistance in topological insulator spin-valves at room temperature |
title_sort | huge magnetoresistance in topological insulator spin-valves at room temperature |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8175690/ https://www.ncbi.nlm.nih.gov/pubmed/34083654 http://dx.doi.org/10.1038/s41598-021-91242-y |
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