A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrica...

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Autores principales: Jin, Xiaoshi, Wang, Yicheng, Ma, Kailu, Wu, Meile, Liu, Xi, Lee, Jong-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8187544/
https://www.ncbi.nlm.nih.gov/pubmed/34101043
http://dx.doi.org/10.1186/s11671-021-03561-8
_version_ 1783705150678892544
author Jin, Xiaoshi
Wang, Yicheng
Ma, Kailu
Wu, Meile
Liu, Xi
Lee, Jong-Ho
author_facet Jin, Xiaoshi
Wang, Yicheng
Ma, Kailu
Wu, Meile
Liu, Xi
Lee, Jong-Ho
author_sort Jin, Xiaoshi
collection PubMed
description A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N(+) region and P(+) region, length of the N(+) region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, I(on)–I(off) ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.
format Online
Article
Text
id pubmed-8187544
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher Springer US
record_format MEDLINE/PubMed
spelling pubmed-81875442021-06-11 A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor Jin, Xiaoshi Wang, Yicheng Ma, Kailu Wu, Meile Liu, Xi Lee, Jong-Ho Nanoscale Res Lett Nano Express A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N(+) region and P(+) region, length of the N(+) region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, I(on)–I(off) ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail. Springer US 2021-06-08 /pmc/articles/PMC8187544/ /pubmed/34101043 http://dx.doi.org/10.1186/s11671-021-03561-8 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Nano Express
Jin, Xiaoshi
Wang, Yicheng
Ma, Kailu
Wu, Meile
Liu, Xi
Lee, Jong-Ho
A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor
title A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor
title_full A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor
title_fullStr A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor
title_full_unstemmed A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor
title_short A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor
title_sort study on the effect of the structural parameters and internal mechanism of a bilateral gate-controlled s/d symmetric and interchangeable bidirectional tunnel field effect transistor
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8187544/
https://www.ncbi.nlm.nih.gov/pubmed/34101043
http://dx.doi.org/10.1186/s11671-021-03561-8
work_keys_str_mv AT jinxiaoshi astudyontheeffectofthestructuralparametersandinternalmechanismofabilateralgatecontrolledsdsymmetricandinterchangeablebidirectionaltunnelfieldeffecttransistor
AT wangyicheng astudyontheeffectofthestructuralparametersandinternalmechanismofabilateralgatecontrolledsdsymmetricandinterchangeablebidirectionaltunnelfieldeffecttransistor
AT makailu astudyontheeffectofthestructuralparametersandinternalmechanismofabilateralgatecontrolledsdsymmetricandinterchangeablebidirectionaltunnelfieldeffecttransistor
AT wumeile astudyontheeffectofthestructuralparametersandinternalmechanismofabilateralgatecontrolledsdsymmetricandinterchangeablebidirectionaltunnelfieldeffecttransistor
AT liuxi astudyontheeffectofthestructuralparametersandinternalmechanismofabilateralgatecontrolledsdsymmetricandinterchangeablebidirectionaltunnelfieldeffecttransistor
AT leejongho astudyontheeffectofthestructuralparametersandinternalmechanismofabilateralgatecontrolledsdsymmetricandinterchangeablebidirectionaltunnelfieldeffecttransistor
AT jinxiaoshi studyontheeffectofthestructuralparametersandinternalmechanismofabilateralgatecontrolledsdsymmetricandinterchangeablebidirectionaltunnelfieldeffecttransistor
AT wangyicheng studyontheeffectofthestructuralparametersandinternalmechanismofabilateralgatecontrolledsdsymmetricandinterchangeablebidirectionaltunnelfieldeffecttransistor
AT makailu studyontheeffectofthestructuralparametersandinternalmechanismofabilateralgatecontrolledsdsymmetricandinterchangeablebidirectionaltunnelfieldeffecttransistor
AT wumeile studyontheeffectofthestructuralparametersandinternalmechanismofabilateralgatecontrolledsdsymmetricandinterchangeablebidirectionaltunnelfieldeffecttransistor
AT liuxi studyontheeffectofthestructuralparametersandinternalmechanismofabilateralgatecontrolledsdsymmetricandinterchangeablebidirectionaltunnelfieldeffecttransistor
AT leejongho studyontheeffectofthestructuralparametersandinternalmechanismofabilateralgatecontrolledsdsymmetricandinterchangeablebidirectionaltunnelfieldeffecttransistor

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