A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrica...

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Detalles Bibliográficos
Autores principales: Jin, Xiaoshi, Wang, Yicheng, Ma, Kailu, Wu, Meile, Liu, Xi, Lee, Jong-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8187544/
https://www.ncbi.nlm.nih.gov/pubmed/34101043
http://dx.doi.org/10.1186/s11671-021-03561-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8187544/
https://www.ncbi.nlm.nih.gov/pubmed/34101043
http://dx.doi.org/10.1186/s11671-021-03561-8

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