Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS(2)/MoTe(2) Heterostructures

Manipulation of Ohmic contacts in 2D transition metal dichalcogenides for enhancing the transport properties and enabling its application as a practical device has been a long‐sought goal. In this study, n‐type tungsten disulfide (WS(2)) single atomic layer to improve the Ohmic contacts of the p‐typ...

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Detalles Bibliográficos
Autores principales: Kim, Jihoon, Venkatesan, A., Kim, Hanul, Kim, Yewon, Whang, Dongmok, Kim, Gil‐Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8188188/
https://www.ncbi.nlm.nih.gov/pubmed/34105270
http://dx.doi.org/10.1002/advs.202100102

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8188188/
https://www.ncbi.nlm.nih.gov/pubmed/34105270
http://dx.doi.org/10.1002/advs.202100102

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