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Optically Induced Static Magnetization in Metal Halide Perovskite for Spin‐Related Optoelectronics

Understanding the feasibility to couple semiconducting and magnetic properties in metal halide perovskites through interface design opens new opportunities for creating the next generation spin‐related optoelectronics. In this work, a fundamentally new phenomenon of optically induced magnetization a...

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Autores principales: Wang, Miaosheng, Xu, Hengxing, Wu, Ting, Ambaye, Haile, Qin, Jiajun, Keum, Jong, Ivanov, Ilia N., Lauter, Valeria, Hu, Bin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8188215/
https://www.ncbi.nlm.nih.gov/pubmed/34141521
http://dx.doi.org/10.1002/advs.202004488
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author Wang, Miaosheng
Xu, Hengxing
Wu, Ting
Ambaye, Haile
Qin, Jiajun
Keum, Jong
Ivanov, Ilia N.
Lauter, Valeria
Hu, Bin
author_facet Wang, Miaosheng
Xu, Hengxing
Wu, Ting
Ambaye, Haile
Qin, Jiajun
Keum, Jong
Ivanov, Ilia N.
Lauter, Valeria
Hu, Bin
author_sort Wang, Miaosheng
collection PubMed
description Understanding the feasibility to couple semiconducting and magnetic properties in metal halide perovskites through interface design opens new opportunities for creating the next generation spin‐related optoelectronics. In this work, a fundamentally new phenomenon of optically induced magnetization achieved by coupling photoexcited orbital magnetic dipoles with magnetic spins at perovskite/ferromagnetic interface is discovered. The depth‐sensitive polarized neutron reflectometry combined with in situ photoexcitation setup, constitutes key evidence of this novel effect. It is demonstrated that a circularly polarized photoexcitation induces a stable magnetization signal within the depth up to 7.5 nm into the surface of high‐quality perovskite (MAPbBr(3)) film underneath a ferromagnetic cobalt layer at room temperature. In contrast, a linearly polarized light does not induce any detectable magnetization in the MAPbBr(3). The observation reveals that photoexcited orbital magnetic dipoles at the surface of perovskite are coupled with the spins of the ferromagnetic atoms at the interface, leading to an optically induced magnetization within the perovskite’s surface. The finding demonstrates that perovskite semiconductor can be bridged with magnetism through optically controllable method at room temperature in this heterojunction design. This provides the new concept of utilizing spin and orbital degrees of freedom in new‐generation spin‐related optoelectronic devices.
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spelling pubmed-81882152021-06-16 Optically Induced Static Magnetization in Metal Halide Perovskite for Spin‐Related Optoelectronics Wang, Miaosheng Xu, Hengxing Wu, Ting Ambaye, Haile Qin, Jiajun Keum, Jong Ivanov, Ilia N. Lauter, Valeria Hu, Bin Adv Sci (Weinh) Research Articles Understanding the feasibility to couple semiconducting and magnetic properties in metal halide perovskites through interface design opens new opportunities for creating the next generation spin‐related optoelectronics. In this work, a fundamentally new phenomenon of optically induced magnetization achieved by coupling photoexcited orbital magnetic dipoles with magnetic spins at perovskite/ferromagnetic interface is discovered. The depth‐sensitive polarized neutron reflectometry combined with in situ photoexcitation setup, constitutes key evidence of this novel effect. It is demonstrated that a circularly polarized photoexcitation induces a stable magnetization signal within the depth up to 7.5 nm into the surface of high‐quality perovskite (MAPbBr(3)) film underneath a ferromagnetic cobalt layer at room temperature. In contrast, a linearly polarized light does not induce any detectable magnetization in the MAPbBr(3). The observation reveals that photoexcited orbital magnetic dipoles at the surface of perovskite are coupled with the spins of the ferromagnetic atoms at the interface, leading to an optically induced magnetization within the perovskite’s surface. The finding demonstrates that perovskite semiconductor can be bridged with magnetism through optically controllable method at room temperature in this heterojunction design. This provides the new concept of utilizing spin and orbital degrees of freedom in new‐generation spin‐related optoelectronic devices. John Wiley and Sons Inc. 2021-05-02 /pmc/articles/PMC8188215/ /pubmed/34141521 http://dx.doi.org/10.1002/advs.202004488 Text en © 2021 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Articles
Wang, Miaosheng
Xu, Hengxing
Wu, Ting
Ambaye, Haile
Qin, Jiajun
Keum, Jong
Ivanov, Ilia N.
Lauter, Valeria
Hu, Bin
Optically Induced Static Magnetization in Metal Halide Perovskite for Spin‐Related Optoelectronics
title Optically Induced Static Magnetization in Metal Halide Perovskite for Spin‐Related Optoelectronics
title_full Optically Induced Static Magnetization in Metal Halide Perovskite for Spin‐Related Optoelectronics
title_fullStr Optically Induced Static Magnetization in Metal Halide Perovskite for Spin‐Related Optoelectronics
title_full_unstemmed Optically Induced Static Magnetization in Metal Halide Perovskite for Spin‐Related Optoelectronics
title_short Optically Induced Static Magnetization in Metal Halide Perovskite for Spin‐Related Optoelectronics
title_sort optically induced static magnetization in metal halide perovskite for spin‐related optoelectronics
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8188215/
https://www.ncbi.nlm.nih.gov/pubmed/34141521
http://dx.doi.org/10.1002/advs.202004488
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