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Defect and strain engineering of monolayer WSe(2) enables site-controlled single-photon emission up to 150 K

In recent years, quantum-dot-like single-photon emitters in atomically thin van der Waals materials have become a promising platform for future on-chip scalable quantum light sources with unique advantages over existing technologies, notably the potential for site-specific engineering. However, the...

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Autores principales: Parto, Kamyar, Azzam, Shaimaa I., Banerjee, Kaustav, Moody, Galan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8196156/
https://www.ncbi.nlm.nih.gov/pubmed/34117243
http://dx.doi.org/10.1038/s41467-021-23709-5
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author Parto, Kamyar
Azzam, Shaimaa I.
Banerjee, Kaustav
Moody, Galan
author_facet Parto, Kamyar
Azzam, Shaimaa I.
Banerjee, Kaustav
Moody, Galan
author_sort Parto, Kamyar
collection PubMed
description In recent years, quantum-dot-like single-photon emitters in atomically thin van der Waals materials have become a promising platform for future on-chip scalable quantum light sources with unique advantages over existing technologies, notably the potential for site-specific engineering. However, the required cryogenic temperatures for the functionality of these sources has been an inhibitor of their full potential. Existing methods to create emitters in 2D materials face fundamental challenges in extending the working temperature while maintaining the emitter’s fabrication yield and purity. In this work, we demonstrate a method of creating site-controlled single-photon emitters in atomically thin WSe(2) with high yield utilizing independent and simultaneous strain engineering via nanoscale stressors and defect engineering via electron-beam irradiation. Many of the emitters exhibit biexciton cascaded emission, single-photon purities above 95%, and working temperatures up to 150 K. This methodology, coupled with possible plasmonic or optical micro-cavity integration, furthers the realization of scalable, room-temperature, and high-quality 2D single- and entangled-photon sources.
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spelling pubmed-81961562021-06-17 Defect and strain engineering of monolayer WSe(2) enables site-controlled single-photon emission up to 150 K Parto, Kamyar Azzam, Shaimaa I. Banerjee, Kaustav Moody, Galan Nat Commun Article In recent years, quantum-dot-like single-photon emitters in atomically thin van der Waals materials have become a promising platform for future on-chip scalable quantum light sources with unique advantages over existing technologies, notably the potential for site-specific engineering. However, the required cryogenic temperatures for the functionality of these sources has been an inhibitor of their full potential. Existing methods to create emitters in 2D materials face fundamental challenges in extending the working temperature while maintaining the emitter’s fabrication yield and purity. In this work, we demonstrate a method of creating site-controlled single-photon emitters in atomically thin WSe(2) with high yield utilizing independent and simultaneous strain engineering via nanoscale stressors and defect engineering via electron-beam irradiation. Many of the emitters exhibit biexciton cascaded emission, single-photon purities above 95%, and working temperatures up to 150 K. This methodology, coupled with possible plasmonic or optical micro-cavity integration, furthers the realization of scalable, room-temperature, and high-quality 2D single- and entangled-photon sources. Nature Publishing Group UK 2021-06-11 /pmc/articles/PMC8196156/ /pubmed/34117243 http://dx.doi.org/10.1038/s41467-021-23709-5 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Parto, Kamyar
Azzam, Shaimaa I.
Banerjee, Kaustav
Moody, Galan
Defect and strain engineering of monolayer WSe(2) enables site-controlled single-photon emission up to 150 K
title Defect and strain engineering of monolayer WSe(2) enables site-controlled single-photon emission up to 150 K
title_full Defect and strain engineering of monolayer WSe(2) enables site-controlled single-photon emission up to 150 K
title_fullStr Defect and strain engineering of monolayer WSe(2) enables site-controlled single-photon emission up to 150 K
title_full_unstemmed Defect and strain engineering of monolayer WSe(2) enables site-controlled single-photon emission up to 150 K
title_short Defect and strain engineering of monolayer WSe(2) enables site-controlled single-photon emission up to 150 K
title_sort defect and strain engineering of monolayer wse(2) enables site-controlled single-photon emission up to 150 k
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8196156/
https://www.ncbi.nlm.nih.gov/pubmed/34117243
http://dx.doi.org/10.1038/s41467-021-23709-5
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