Effect of the Order-Disorder Transition on the Electronic Structure and Physical Properties of Layered CuCrS(2)

The work reports a comprehensive study of the Seebeck coefficient, electrical resistivity and heat capacity of CuCrS(2) in a wide temperature range of 100–740 K. It was shown that the value of the Seebeck coefficient is significantly affected by the sample treatment procedure. The order-to-disorder (ODT) phase transition was found to cause a metal-insulator transition (MIT). It was established that the ODT diminishes the Seebeck coefficient at high temperatures (T > 700 K). The DFT calculations of the CuCrS(2) electronic structure showed that the localization of copper atoms in octahedral sites makes the band gap vanish due to the MIT. The decrease of CuCrS(2) electrical resistivity in the ODT temperature region corresponds to the MIT.