Epitaxial lift-off of freestanding (011) and (111) SrRuO(3) thin films using a water sacrificial layer

Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO(3) thin films...

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Detalles Bibliográficos
Autores principales: Le, Phu T. P., ten Elshof, Johan E., Koster, Gertjan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8203781/
https://www.ncbi.nlm.nih.gov/pubmed/34127715
http://dx.doi.org/10.1038/s41598-021-91848-2
Descripción
Sumario:Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO(3) thin films using Sr(3)Al(2)O(6) water-sacrificial layer. The epitaxial Sr(3)Al(2)O(6)(011) and Sr(3)Al(2)O(6)(111) layers were realized on SrTiO(3)(011) and SrTiO(3)(111), respectively. Subsequently, SrRuO(3) films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO(3)(011)(pc) and SrRuO(3)(111)(pc) films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.

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