Cargando…

Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots

We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). The combination of X-STM and APT is a very po...

Descripción completa

Detalles Bibliográficos
Autores principales:	Gajjela, Raja S. R., Hendriks, Arthur L., Douglas, James O., Sala, Elisa M., Steindl, Petr, Klenovský, Petr, Bagot, Paul A. J., Moody, Michael P., Bimberg, Dieter, Koenraad, Paul M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8203795/ https://www.ncbi.nlm.nih.gov/pubmed/34127643 http://dx.doi.org/10.1038/s41377-021-00564-z

Ejemplares similares

Si/Ge intermixing during Ge Stranski–Krastanov growth
por: Portavoce, Alain, et al.
Publicado: (2014)

Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires
por: Kasanaboina, Pavan, et al.
Publicado: (2016)

Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components
por: Li, Haolin, et al.
Publicado: (2019)

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
por: Sadofyev, Yuri G., et al.
Publicado: (2010)

Dimension-Dependent Phenomenological Model of Excitonic Electric Dipole in InGaAs Quantum Dots
por: Steindl, Petr, et al.
Publicado: (2022)

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures
por: Shi, Suixing, et al.
Publicado: (2015)

High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
por: Fuchs, C., et al.
Publicado: (2018)

Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness
por: Schuck, Christopher F., et al.
Publicado: (2019)

Author Correction: High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
por: Fuchs, C., et al.
Publicado: (2018)

Metal-Semiconductor AsSb-Al(0.6)Ga(0.4)As(0.97)Sb(0.03) Metamaterial
por: Bert, Nikolay, et al.
Publicado: (2022)

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers
por: Loeber, Thomas H, et al.
Publicado: (2011)

Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications
por: Lu, Qi, et al.
Publicado: (2019)

Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers
por: Gonzalez, David, et al.
Publicado: (2023)

Annual GaAs Integrated Circuits Symposium : GaAs IC
por: Madihian, M, et al.
Publicado: (1996)

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers
por: Ohtake, Akihiro, et al.
Publicado: (2018)

GaAs detectors
por: Beaumont, S P, et al.
Publicado: (1990)

Study of a Gate-Engineered Vertical TFET with GaSb/GaAs(0.5)Sb(0.5) Heterojunction
por: Xie, Haiwu, et al.
Publicado: (2021)

Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
por: Balagula, Roman M., et al.
Publicado: (2020)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2015)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2017)

Implantation and diffusion of $^{73}$As in GaAs and GaP
por: Bösker, G, et al.
Publicado: (2000)

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
por: Wu, Yao, et al.
Publicado: (2018)

GaAs detector status
por: Smith, K M
Publicado: (1996)

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
por: Benyahia, D., et al.
Publicado: (2018)

Polymer Brushes on GaAs and GaAs/AlGaAs Nanoheterostructures: A Promising Platform for Attractive Detection of Legionella pneumophila
por: Chawich, Juliana, et al.
Publicado: (2022)

18th Annual IEEE GaAs Integrated Circuits Symposium - GaAs IC
por: Müller, J E, et al.
Publicado: (1997)

Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
por: Petrushkov, Mikhail O., et al.
Publicado: (2022)

Creation of Ga$_{As}$ antisites in GaAs by transmutation of radioactive $^{71}$As$_{As}$ to stable $^{71}$Ga$_{As}$
por: Magerle, R, et al.
Publicado: (1997)

AlGaN/GaN FETs looms over GaAs technology
Publicado: (2003)

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
por: Dai, Liping, et al.
Publicado: (2014)

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
por: Jallipalli, A, et al.
Publicado: (2009)

Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material
por: Lin, Hsiang-Ting, et al.
Publicado: (2020)

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
por: Wang, Zhiming M, et al.
Publicado: (2010)

Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures
por: Reyes, Daniel F, et al.
Publicado: (2014)

Modeling of the growth of GaAs–AlGaAs core–shell nanowires
por: Zhang, Qian, et al.
Publicado: (2017)

Degradation Mechanisms for GaN and GaAs High Speed Transistors
por: Cheney, David J., et al.
Publicado: (2012)

Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires
por: Jansson, M., et al.
Publicado: (2023)

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates
por: Shafi, M, et al.
Publicado: (2010)

Diffusion of $^{52}$Mn in GaAs
por: Räasänen, J, et al.
Publicado: (2004)

Characterization of inactive carbon in GaAs
por: Moll, A J, et al.
Publicado: (1994)

Cannot write session to /tmp/vufind_sessions/sess_9gifiu09862b55useilpfov274