Cargando…
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to med...
Autores principales: | Li, Jinchai, Gao, Na, Cai, Duanjun, Lin, Wei, Huang, Kai, Li, Shuping, Kang, Junyong |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8206881/ https://www.ncbi.nlm.nih.gov/pubmed/34150202 http://dx.doi.org/10.1038/s41377-021-00563-0 |
Ejemplares similares
-
Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
por: Gao, Na, et al.
Publicado: (2012) -
Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons
por: Huang, Kai, et al.
Publicado: (2014) -
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
por: Römer, Friedhard, et al.
Publicado: (2021) -
On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
por: Li, Luping, et al.
Publicado: (2017) -
Highly transparent light emitting diodes on graphene encapsulated Cu nanowires network
por: Huang, Youyang, et al.
Publicado: (2018)