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Nonvolatile programmable silicon photonics using an ultralow-loss Sb(2)Se(3) phase change material

The next generation of silicon-based photonic processors and neural and quantum networks need to be adaptable, reconfigurable, and programmable. Phase change technology offers proven nonvolatile electronic programmability; however, the materials used to date have shown prohibitively high optical los...

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Detalles Bibliográficos
Autores principales: Delaney, Matthew, Zeimpekis, Ioannis, Du, Han, Yan, Xingzhao, Banakar, Mehdi, Thomson, David J., Hewak, Daniel W., Muskens, Otto L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8208718/
https://www.ncbi.nlm.nih.gov/pubmed/34134978
http://dx.doi.org/10.1126/sciadv.abg3500
Descripción
Sumario:The next generation of silicon-based photonic processors and neural and quantum networks need to be adaptable, reconfigurable, and programmable. Phase change technology offers proven nonvolatile electronic programmability; however, the materials used to date have shown prohibitively high optical losses, which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material Sb(2)Se(3) for ultralow-loss programmable silicon photonics. The favorable combination of large refractive index contrast and ultralow losses seen in Sb(2)Se(3) facilitates an unprecedented optical phase control exceeding 10π radians in a Mach-Zehnder interferometer. To demonstrate full control over the flow of light, we introduce nanophotonic digital patterning as a previously unexplored conceptual approach with a footprint orders of magnitude smaller than state-of-the-art interferometer meshes. Our approach enables a wealth of possibilities in high-density reconfiguration of optical functionalities on silicon chip.