The first principle calculation of improving p-type characteristics of B(x)Al(1-x)N

AlN is one of the third-generation semiconductor materials with wide application prospects due to its 6.2 eV band gap. In the application of semiconductor deep ultraviolet lasers, progress is slow due to the difficulty in obtaining p-type AlN with good performance. In this paper, the commonly used w...

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Detalles Bibliográficos
Autores principales: Lu, Zhengqian, Wang, Fang, Liu, Yuhuai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8209209/
https://www.ncbi.nlm.nih.gov/pubmed/34135446
http://dx.doi.org/10.1038/s41598-021-92260-6
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author Lu, Zhengqian
Wang, Fang
Liu, Yuhuai
author_facet Lu, Zhengqian
Wang, Fang
Liu, Yuhuai
author_sort Lu, Zhengqian
collection PubMed
description AlN is one of the third-generation semiconductor materials with wide application prospects due to its 6.2 eV band gap. In the application of semiconductor deep ultraviolet lasers, progress is slow due to the difficulty in obtaining p-type AlN with good performance. In this paper, the commonly used way of Mg directly as AlN dopant is abandoned, the inhibition effect of the B component on self-compensation of AlN crystal was studied. The improvement of self-compensation performance of AlN crystal by B component is studied by first principles calculation. The results show that the addition of B component can increase the hole concentration of AlN, which is conducive to the formation of p-type AlN.
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spelling pubmed-82092092021-06-17 The first principle calculation of improving p-type characteristics of B(x)Al(1-x)N Lu, Zhengqian Wang, Fang Liu, Yuhuai Sci Rep Article AlN is one of the third-generation semiconductor materials with wide application prospects due to its 6.2 eV band gap. In the application of semiconductor deep ultraviolet lasers, progress is slow due to the difficulty in obtaining p-type AlN with good performance. In this paper, the commonly used way of Mg directly as AlN dopant is abandoned, the inhibition effect of the B component on self-compensation of AlN crystal was studied. The improvement of self-compensation performance of AlN crystal by B component is studied by first principles calculation. The results show that the addition of B component can increase the hole concentration of AlN, which is conducive to the formation of p-type AlN. Nature Publishing Group UK 2021-06-16 /pmc/articles/PMC8209209/ /pubmed/34135446 http://dx.doi.org/10.1038/s41598-021-92260-6 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Lu, Zhengqian
Wang, Fang
Liu, Yuhuai
The first principle calculation of improving p-type characteristics of B(x)Al(1-x)N
title The first principle calculation of improving p-type characteristics of B(x)Al(1-x)N
title_full The first principle calculation of improving p-type characteristics of B(x)Al(1-x)N
title_fullStr The first principle calculation of improving p-type characteristics of B(x)Al(1-x)N
title_full_unstemmed The first principle calculation of improving p-type characteristics of B(x)Al(1-x)N
title_short The first principle calculation of improving p-type characteristics of B(x)Al(1-x)N
title_sort first principle calculation of improving p-type characteristics of b(x)al(1-x)n
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8209209/
https://www.ncbi.nlm.nih.gov/pubmed/34135446
http://dx.doi.org/10.1038/s41598-021-92260-6
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