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The first principle calculation of improving p-type characteristics of B(x)Al(1-x)N

AlN is one of the third-generation semiconductor materials with wide application prospects due to its 6.2 eV band gap. In the application of semiconductor deep ultraviolet lasers, progress is slow due to the difficulty in obtaining p-type AlN with good performance. In this paper, the commonly used w...

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Detalles Bibliográficos
Autores principales:	Lu, Zhengqian, Wang, Fang, Liu, Yuhuai
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8209209/ https://www.ncbi.nlm.nih.gov/pubmed/34135446 http://dx.doi.org/10.1038/s41598-021-92260-6

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