Synergistic effects of bast fiber seedling film and nano-silicon fertilizer to increase the lodging resistance and yield of rice

The use of bast fiber film can improve rice seedling quality, and nano-silicon fertilizer can increase rice yields. This study aimed to compare the effects of using bast fiber film, nano-silicon fertilizer, and both treatments on rice yield and lodging resistance. A 2-year field experiment was conducted in 2017 and 2018, in Liaoning, China. The experiment comprised a control (no-bast fiber film, no nano-silicon fertilizer; CK), and three treatments: seedlings cultivated with bast film (FM), single nano-silicon fertilization (SF), and bast fiber film seedlings + nano-silicon fertilization (FM + SF). The japonica rice (Oryza sativa L.) cultivar Liaojing 371 was used. Compared with the plants in CK, those in the FM treatment showed greater average root diameter, root volume and root dry weight. The SF treatment increased the single stem flexural strength, increased the contents of silicon, lignin, and cellulose in the rice plant stalk, and reduced the lodging index, thereby increasing lodging resistance. The SF treatment resulted in increased leaf chlorophyll content at late growth stage and a higher net photosynthetic rate, which increased plant dry matter accumulation. In the FM + SF treatment, plant growth was enhanced during the whole growth period, which resulted in an increased number of effective panicles and an increased grain yield. The results show that the combination of FM and SF synergistically improves rice lodging resistance and grain yield. This low-cost, high-efficiency system is of great significance for improving the stability and lodging resistance of rice plants, thereby increasing yields.