Electron-Beam Irradiation Induced Regulation of Surface Defects in Lead Halide Perovskite Thin Films

Organic-inorganic hybrid perovskites (OIHPs) have been intensively studied due to their fascinating optoelectronic performance. Electron microscopy and related characterization techniques are powerful to figure out their structure-property relationships at the nanoscale. However, electron beam irradiation usually causes damage to these beam-sensitive materials and thus deteriorates the associated devices. Taking a widely used CH(3)NH(3)PbI(3) film as an example, here, we carry out a comprehensive study on how electron beam irradiation affects its properties. Interestingly, our results reveal that photoluminescence (PL) intensity of the film can be significantly improved along with blue-shift of emission peak at a specific electron beam dose interval. This improvement stems from the reduction of trap density at the CH(3)NH(3)PbI(3) surface. The knock-on effect helps expose a fresh surface assisted by the surface defect-induced lowering of displacement threshold energy. Meanwhile, the radiolysis process consistently degrades the crystal structure and weaken the PL emission with the increase of electron beam dose. Consequently, the final PL emission comes from a balance between knock-on and radiolysis effects. Taking advantage of the defect regulation, we successfully demonstrate a patterned CH(3)NH(3)PbI(3) film with controllable PL emission and a photodetector with enhanced photocurrent. This work will trigger the application of electron beam irradiation as a powerful tool for perovskite materials processing in micro-LEDs and other optoelectronic applications.