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Utilizing the Switching Stochasticity of HfO(2)/TiO(x)-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns
With the arrival of the Internet of Things (IoT) and the challenges arising from Big Data, neuromorphic chip concepts are seen as key solutions for coping with the massive amount of unstructured data streams by moving the computation closer to the sensors, the so-called “edge computing.” Augmenting...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Frontiers Media S.A.
2021
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8215350/ https://www.ncbi.nlm.nih.gov/pubmed/34163323 http://dx.doi.org/10.3389/fnins.2021.661856 |
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author | Bengel, Christopher Cüppers, Felix Payvand, Melika Dittmann, Regina Waser, Rainer Hoffmann-Eifert, Susanne Menzel, Stephan |
author_facet | Bengel, Christopher Cüppers, Felix Payvand, Melika Dittmann, Regina Waser, Rainer Hoffmann-Eifert, Susanne Menzel, Stephan |
author_sort | Bengel, Christopher |
collection | PubMed |
description | With the arrival of the Internet of Things (IoT) and the challenges arising from Big Data, neuromorphic chip concepts are seen as key solutions for coping with the massive amount of unstructured data streams by moving the computation closer to the sensors, the so-called “edge computing.” Augmenting these chips with emerging memory technologies enables these edge devices with non-volatile and adaptive properties which are desirable for low power and online learning operations. However, an energy- and area-efficient realization of these systems requires disruptive hardware changes. Memristor-based solutions for these concepts are in the focus of research and industry due to their low-power and high-density online learning potential. Specifically, the filamentary-type valence change mechanism (VCM memories) have shown to be a promising candidate In consequence, physical models capturing a broad spectrum of experimentally observed features such as the pronounced cycle-to-cycle (c2c) and device-to-device (d2d) variability are required for accurate evaluation of the proposed concepts. In this study, we present an in-depth experimental analysis of d2d and c2c variability of filamentary-type bipolar switching HfO(2)/TiO(x) nano-sized crossbar devices and match the experimentally observed variabilities to our physically motivated JART VCM compact model. Based on this approach, we evaluate the concept of parallel operation of devices as a synapse both experimentally and theoretically. These parallel synapses form a synaptic array which is at the core of neuromorphic chips. We exploit the c2c variability of these devices for stochastic online learning which has shown to increase the effective bit precision of the devices. Finally, we demonstrate that stochastic switching features for a pattern classification task that can be employed in an online learning neural network. |
format | Online Article Text |
id | pubmed-8215350 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Frontiers Media S.A. |
record_format | MEDLINE/PubMed |
spelling | pubmed-82153502021-06-22 Utilizing the Switching Stochasticity of HfO(2)/TiO(x)-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns Bengel, Christopher Cüppers, Felix Payvand, Melika Dittmann, Regina Waser, Rainer Hoffmann-Eifert, Susanne Menzel, Stephan Front Neurosci Neuroscience With the arrival of the Internet of Things (IoT) and the challenges arising from Big Data, neuromorphic chip concepts are seen as key solutions for coping with the massive amount of unstructured data streams by moving the computation closer to the sensors, the so-called “edge computing.” Augmenting these chips with emerging memory technologies enables these edge devices with non-volatile and adaptive properties which are desirable for low power and online learning operations. However, an energy- and area-efficient realization of these systems requires disruptive hardware changes. Memristor-based solutions for these concepts are in the focus of research and industry due to their low-power and high-density online learning potential. Specifically, the filamentary-type valence change mechanism (VCM memories) have shown to be a promising candidate In consequence, physical models capturing a broad spectrum of experimentally observed features such as the pronounced cycle-to-cycle (c2c) and device-to-device (d2d) variability are required for accurate evaluation of the proposed concepts. In this study, we present an in-depth experimental analysis of d2d and c2c variability of filamentary-type bipolar switching HfO(2)/TiO(x) nano-sized crossbar devices and match the experimentally observed variabilities to our physically motivated JART VCM compact model. Based on this approach, we evaluate the concept of parallel operation of devices as a synapse both experimentally and theoretically. These parallel synapses form a synaptic array which is at the core of neuromorphic chips. We exploit the c2c variability of these devices for stochastic online learning which has shown to increase the effective bit precision of the devices. Finally, we demonstrate that stochastic switching features for a pattern classification task that can be employed in an online learning neural network. Frontiers Media S.A. 2021-06-07 /pmc/articles/PMC8215350/ /pubmed/34163323 http://dx.doi.org/10.3389/fnins.2021.661856 Text en Copyright © 2021 Bengel, Cüppers, Payvand, Dittmann, Waser, Hoffmann-Eifert and Menzel. https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms. |
spellingShingle | Neuroscience Bengel, Christopher Cüppers, Felix Payvand, Melika Dittmann, Regina Waser, Rainer Hoffmann-Eifert, Susanne Menzel, Stephan Utilizing the Switching Stochasticity of HfO(2)/TiO(x)-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns |
title | Utilizing the Switching Stochasticity of HfO(2)/TiO(x)-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns |
title_full | Utilizing the Switching Stochasticity of HfO(2)/TiO(x)-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns |
title_fullStr | Utilizing the Switching Stochasticity of HfO(2)/TiO(x)-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns |
title_full_unstemmed | Utilizing the Switching Stochasticity of HfO(2)/TiO(x)-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns |
title_short | Utilizing the Switching Stochasticity of HfO(2)/TiO(x)-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns |
title_sort | utilizing the switching stochasticity of hfo(2)/tio(x)-based reram devices and the concept of multiple device synapses for the classification of overlapping and noisy patterns |
topic | Neuroscience |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8215350/ https://www.ncbi.nlm.nih.gov/pubmed/34163323 http://dx.doi.org/10.3389/fnins.2021.661856 |
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