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Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator
The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime. In order to correct this issue and enhance the capabilities of this type of simulator, we discuss in this paper two alternative and...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8224779/ https://www.ncbi.nlm.nih.gov/pubmed/34067459 http://dx.doi.org/10.3390/mi12060601 |