Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors

Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. T-shaped gate tunneling field-effect transistors (TGTFET) adapt double source and T-shaped...

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Detalles Bibliográficos
Autores principales: Chong, Chen, Liu, Hongxia, Wang, Shulong, Chen, Shupeng, Xie, Haiwu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8225217/
https://www.ncbi.nlm.nih.gov/pubmed/34074056
http://dx.doi.org/10.3390/mi12060609

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