Damage Effect of ALD-Al(2)O(3) Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation

The radiation response of Al(2)O(3) on silicon substrate under gamma-rays is studied in this article. The atomic layer deposited Al(2)O(3) based metal-oxide-semiconductor structures were irradiated under gamma-ray with the total dose of 1.2 Mrad(Si)/2.5 Mrad(Si)/4 Mrad(Si). The generation, transport...

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Detalles Bibliográficos
Autor principal: Ding, Man
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8228728/
https://www.ncbi.nlm.nih.gov/pubmed/34200007
http://dx.doi.org/10.3390/mi12060661

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8228728/
https://www.ncbi.nlm.nih.gov/pubmed/34200007
http://dx.doi.org/10.3390/mi12060661

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