Cargando…
Transient Study of Femtosecond Laser–Induced Ge(2)Sb(2)Te(5) Phase Change Film Morphology
Femtosecond laser-induced crystallization and ablation of Ge(2)Sb(2)Te(5) (GST) phase change film is investigated by reflectivity pump-probing technology. Below the ablation threshold, the face-centered cubic structure (FCC) state in the central area can be formed, and cylindrical rims are formed in...
Autores principales: | Zhou, Wenju, Zhang, Zifeng, Zhang, Qingwei, Qi, Dongfeng, Xu, Tianxiang, Dai, Shixun, Shen, Xiang |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8229194/ https://www.ncbi.nlm.nih.gov/pubmed/34071820 http://dx.doi.org/10.3390/mi12060616 |
Ejemplares similares
-
Artificial Anisotropy in Ge(2)Sb(2)Te(5) Thin Films after Femtosecond Laser Irradiation
por: Kolchin, Aleksandr, et al.
Publicado: (2022) -
Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation
por: Bulai, Georgiana, et al.
Publicado: (2019) -
Crystallization of Ge(2)Sb(2)Te(5) thin films by nano- and femtosecond single laser pulse irradiation
por: Sun, Xinxing, et al.
Publicado: (2016) -
Ultrafast Dynamics of Different Phase States Ge(2)Sb(2)Te(5) Film Induced by a Femtosecond Laser Pulse Irradiation
por: Wu, Hao, et al.
Publicado: (2022) -
Pulsed laser deposited GeTe-rich GeTe-Sb(2)Te(3) thin films
por: Bouška, M., et al.
Publicado: (2016)