Cargando…
Hysteresis in As-Synthesized MoS(2) Transistors: Origin and Sensing Perspectives
Two-dimensional materials, including molybdenum disulfide (MoS [Formula: see text]), present promising sensing and detecting capabilities thanks to their extreme sensitivity to changes in the environment. Their reduced thickness also facilitates the electrostatic control of the channel and opens the...
Autores principales: | Marquez, Carlos, Salazar, Norberto, Gity, Farzan, Galdon, Jose C., Navarro, Carlos, Sampedro, Carlos, Hurley, Paul K., Chang, Edward Yi, Gamiz, Francisco |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8230200/ https://www.ncbi.nlm.nih.gov/pubmed/34073095 http://dx.doi.org/10.3390/mi12060646 |
Ejemplares similares
-
Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics
por: Nam, Hongsuk, et al.
Publicado: (2015) -
Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS(2) Field Effect Transistors
por: Wu, Yueh-Chun, et al.
Publicado: (2015) -
Steep-Slope and Hysteresis-Free MoS(2) Negative-Capacitance Transistors Using Single HfZrAlO Layer as Gate Dielectric
por: Tao, Xinge, et al.
Publicado: (2022) -
On current transients in MoS(2) Field Effect Transistors
por: Macucci, Massimo, et al.
Publicado: (2017) -
Organic Electrochemical Transistor with MoS(2) Nanosheets Modified Gate Electrode for Sensitive Glucose Sensing
por: Hu, Jin, et al.
Publicado: (2023)