E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical cha...

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Detalles Bibliográficos
Autores principales: Jia, Li-Fang, Zhang, Lian, Xiao, Jin-Ping, Cheng, Zhe, Lin, De-Feng, Ai, Yu-Jie, Zhao, Jin-Chao, Zhang, Yun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8230248/
https://www.ncbi.nlm.nih.gov/pubmed/34071834
http://dx.doi.org/10.3390/mi12060617

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8230248/
https://www.ncbi.nlm.nih.gov/pubmed/34071834
http://dx.doi.org/10.3390/mi12060617

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