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E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical cha...

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Detalles Bibliográficos
Autores principales:	Jia, Li-Fang, Zhang, Lian, Xiao, Jin-Ping, Cheng, Zhe, Lin, De-Feng, Ai, Yu-Jie, Zhao, Jin-Chao, Zhang, Yun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8230248/ https://www.ncbi.nlm.nih.gov/pubmed/34071834 http://dx.doi.org/10.3390/mi12060617

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