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An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique

An ultrafast Active Quenching—Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology. By exploiting the body biasing technique, the ava...

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Detalles Bibliográficos
Autores principales: Dolatpoor Lakeh, Mohammadreza, Kammerer, Jean-Baptiste, Aguénounon, Enagnon, Issartel, Dylan, Schell, Jean-Baptiste, Rink, Sven, Cathelin, Andreia, Calmon, Francis, Uhring, Wilfried
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8230464/
https://www.ncbi.nlm.nih.gov/pubmed/34200801
http://dx.doi.org/10.3390/s21124014

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