Cargando…
Conformally Gated Surface Conducting Behaviors of Single-Walled Carbon Nanotube Thin-Film-Transistors
Semiconducting single-walled carbon nanotubes (s-SWCNTs) have gathered significant interest in various emerging electronics due to their outstanding electrical and mechanical properties. Although large-area and low-cost fabrication of s-SWCNT field effect transistors (FETs) can be easily achieved vi...
Autores principales: | Kim, Kyung-Tae, Lee, Keon Woo, Moon, Sanghee, Park, Joon Bee, Park, Chan-Yong, Nam, Seung-Ji, Kim, Jaehyun, Lee, Myoung-Jae, Heo, Jae Sang, Park, Sung Kyu |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8234559/ https://www.ncbi.nlm.nih.gov/pubmed/34204507 http://dx.doi.org/10.3390/ma14123361 |
Ejemplares similares
-
Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors
por: Yoo, Hocheon, et al.
Publicado: (2017) -
Parasitic Current Induced by Gate Overlap in Thin-Film Transistors
por: Lee, Hyeon-Jun, et al.
Publicado: (2021) -
Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction
por: Lim, Jung Wook, et al.
Publicado: (2021) -
Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors
por: Heo, Jae Sang, et al.
Publicado: (2017) -
Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors
por: Lee, Jinwon, et al.
Publicado: (2018)