Impact of GaAs(100) surface preparation on EQE of AZO/Al(2)O(3)/p-GaAs photovoltaic structures

In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface/interface needs to be properly prepared. In the experiments described here we examined eight different paths of GaAs surface treatment (cleaning, etching, passivation) which resulted in different external qu...

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Detalles Bibliográficos
Autores principales: Caban, Piotr, Pietruszka, Rafał, Kaszewski, Jarosław, Ożga, Monika, Witkowski, Bartłomiej S, Kopalko, Krzysztof, Kuźmiuk, Piotr, Gwóźdź, Katarzyna, Płaczek-Popko, Ewa, Lawniczak-Jablonska, Krystyna, Godlewski, Marek
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2021
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8261275/
https://www.ncbi.nlm.nih.gov/pubmed/34285862
http://dx.doi.org/10.3762/bjnano.12.48

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8261275/
https://www.ncbi.nlm.nih.gov/pubmed/34285862
http://dx.doi.org/10.3762/bjnano.12.48

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