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Emergent Magnetic Phenomenon with Unconventional Structure in Epitaxial Manganate Thin Films

A variety of emergent phenomena are enabled by interface engineering in the complex oxides heterostructures. While extensive attention is attracted to LaMnO(3) (LMO) thin films for observing the control of functionalities at its interface with substrate, the nature of the magnetic phases in the thin...

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Detalles Bibliográficos
Autores principales: Yang, Mingwei, Jin, Kuijuan, Yao, Hongbao, Zhang, Qinghua, Ji, Yiru, Gu, Lin, Ren, Wenning, Zhao, Jiali, Wang, Jiaou, Guo, Er‐Jia, Ge, Chen, Wang, Can, Xu, Xiulai, Wu, Qiong, Yang, Guozhen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8261492/
https://www.ncbi.nlm.nih.gov/pubmed/34258162
http://dx.doi.org/10.1002/advs.202100177
Descripción
Sumario:A variety of emergent phenomena are enabled by interface engineering in the complex oxides heterostructures. While extensive attention is attracted to LaMnO(3) (LMO) thin films for observing the control of functionalities at its interface with substrate, the nature of the magnetic phases in the thin film is, however, controversial. Here, it is reported that the ferromagnetism in two and five unit cells thick LMO films epitaxially deposited on (001)‐SrTiO(3) substrates, a ferromagnetic/ferromagnetic coupling in eight and ten unit cells ones, and a striking ferromagnetic/antiferromagnetic pinning effect with apparent positive exchange bias in 15 and 20 unit cells ones are observed. This novel phenomenon in both 15 and 20 unit cells films indicates a coexistence of three magnetic orderings in a single LMO film. The high‐resolution scanning transmission electron microscopy suggests a P2(1)/n to Pbnm symmetry transition from interface to surface, with the spatial stratification of MnO(6) octahedral morphology, corresponding to different magnetic orderings. These results can shed some new lights on manipulating the functionality of oxides by interface engineering.