GaAs Nanomembranes in the High Electron Mobility Transistor Technology

A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In(0.23)Ga(0.77)As channel with a sheet electron concentration of 3....

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Detalles Bibliográficos
Autores principales: Gregušová, Dagmar, Dobročka, Edmund, Eliáš, Peter, Stoklas, Roman, Blaho, Michal, Pohorelec, Ondrej, Haščík, Štefan, Kučera, Michal, Kúdela, Róbert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8269475/
https://www.ncbi.nlm.nih.gov/pubmed/34206408
http://dx.doi.org/10.3390/ma14133461

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8269475/
https://www.ncbi.nlm.nih.gov/pubmed/34206408
http://dx.doi.org/10.3390/ma14133461

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