Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se(2) Thin Films

Cu(In,Ga)Se(2) (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structura...

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Detalles Bibliográficos
Autores principales: Poudel, Deewakar, Belfore, Benjamin, Ashrafee, Tasnuva, Karki, Shankar, Rajan, Grace, Rockett, Angus, Marsillac, Sylvain
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8269732/
https://www.ncbi.nlm.nih.gov/pubmed/34203128
http://dx.doi.org/10.3390/ma14133596
Descripción
Sumario:Cu(In,Ga)Se(2) (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium.

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