Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se(2) Thin Films

Cu(In,Ga)Se(2) (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structura...

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Autores principales: Poudel, Deewakar, Belfore, Benjamin, Ashrafee, Tasnuva, Karki, Shankar, Rajan, Grace, Rockett, Angus, Marsillac, Sylvain
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8269732/
https://www.ncbi.nlm.nih.gov/pubmed/34203128
http://dx.doi.org/10.3390/ma14133596
_version_ 1783720650621321216
author Poudel, Deewakar
Belfore, Benjamin
Ashrafee, Tasnuva
Karki, Shankar
Rajan, Grace
Rockett, Angus
Marsillac, Sylvain
author_facet Poudel, Deewakar
Belfore, Benjamin
Ashrafee, Tasnuva
Karki, Shankar
Rajan, Grace
Rockett, Angus
Marsillac, Sylvain
author_sort Poudel, Deewakar
collection PubMed
description Cu(In,Ga)Se(2) (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium.
format Online
Article
Text
id pubmed-8269732
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-82697322021-07-10 Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se(2) Thin Films Poudel, Deewakar Belfore, Benjamin Ashrafee, Tasnuva Karki, Shankar Rajan, Grace Rockett, Angus Marsillac, Sylvain Materials (Basel) Article Cu(In,Ga)Se(2) (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium. MDPI 2021-06-28 /pmc/articles/PMC8269732/ /pubmed/34203128 http://dx.doi.org/10.3390/ma14133596 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Poudel, Deewakar
Belfore, Benjamin
Ashrafee, Tasnuva
Karki, Shankar
Rajan, Grace
Rockett, Angus
Marsillac, Sylvain
Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se(2) Thin Films
title Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se(2) Thin Films
title_full Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se(2) Thin Films
title_fullStr Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se(2) Thin Films
title_full_unstemmed Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se(2) Thin Films
title_short Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se(2) Thin Films
title_sort analysis of post-deposition recrystallization processing via indium bromide of cu(in,ga)se(2) thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8269732/
https://www.ncbi.nlm.nih.gov/pubmed/34203128
http://dx.doi.org/10.3390/ma14133596
work_keys_str_mv AT poudeldeewakar analysisofpostdepositionrecrystallizationprocessingviaindiumbromideofcuingase2thinfilms
AT belforebenjamin analysisofpostdepositionrecrystallizationprocessingviaindiumbromideofcuingase2thinfilms
AT ashrafeetasnuva analysisofpostdepositionrecrystallizationprocessingviaindiumbromideofcuingase2thinfilms
AT karkishankar analysisofpostdepositionrecrystallizationprocessingviaindiumbromideofcuingase2thinfilms
AT rajangrace analysisofpostdepositionrecrystallizationprocessingviaindiumbromideofcuingase2thinfilms
AT rockettangus analysisofpostdepositionrecrystallizationprocessingviaindiumbromideofcuingase2thinfilms
AT marsillacsylvain analysisofpostdepositionrecrystallizationprocessingviaindiumbromideofcuingase2thinfilms

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