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Sensitive Planar Microwave Diode on the Base of Ternary Al(x)Ga(1-x)As Semiconductor Compound
The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-Al(x)Ga(1-x)As layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8271366/ https://www.ncbi.nlm.nih.gov/pubmed/34209095 http://dx.doi.org/10.3390/s21134487 |
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author | Anbinderis, Maksimas Ašmontas, Steponas Čerškus, Aurimas Gradauskas, Jonas Lučun, Andžej Šilėnas, Aldis Sužiedėlis, Algirdas |
author_facet | Anbinderis, Maksimas Ašmontas, Steponas Čerškus, Aurimas Gradauskas, Jonas Lučun, Andžej Šilėnas, Aldis Sužiedėlis, Algirdas |
author_sort | Anbinderis, Maksimas |
collection | PubMed |
description | The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-Al(x)Ga(1-x)As layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve as reliable and inexpensive sensors of microwave radiation in the millimeter wavelength range; they sense electromagnetic radiation directly, without any external bias voltage at room temperature. The investigation revealed a strong dependence of the detection properties of the microwave diodes on AlAs mole fraction x: in the K(a) microwave frequency range, the median value of voltage responsivity is several volts per watt in the case of GaAs-based diodes (x = 0), and it substantially increases, reaching hundreds of volts per watt at higher x values. Also, a model enabling us to forecast the responsivity of the sensor in other frequency ranges is proposed. |
format | Online Article Text |
id | pubmed-8271366 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-82713662021-07-11 Sensitive Planar Microwave Diode on the Base of Ternary Al(x)Ga(1-x)As Semiconductor Compound Anbinderis, Maksimas Ašmontas, Steponas Čerškus, Aurimas Gradauskas, Jonas Lučun, Andžej Šilėnas, Aldis Sužiedėlis, Algirdas Sensors (Basel) Article The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-Al(x)Ga(1-x)As layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve as reliable and inexpensive sensors of microwave radiation in the millimeter wavelength range; they sense electromagnetic radiation directly, without any external bias voltage at room temperature. The investigation revealed a strong dependence of the detection properties of the microwave diodes on AlAs mole fraction x: in the K(a) microwave frequency range, the median value of voltage responsivity is several volts per watt in the case of GaAs-based diodes (x = 0), and it substantially increases, reaching hundreds of volts per watt at higher x values. Also, a model enabling us to forecast the responsivity of the sensor in other frequency ranges is proposed. MDPI 2021-06-30 /pmc/articles/PMC8271366/ /pubmed/34209095 http://dx.doi.org/10.3390/s21134487 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Anbinderis, Maksimas Ašmontas, Steponas Čerškus, Aurimas Gradauskas, Jonas Lučun, Andžej Šilėnas, Aldis Sužiedėlis, Algirdas Sensitive Planar Microwave Diode on the Base of Ternary Al(x)Ga(1-x)As Semiconductor Compound |
title | Sensitive Planar Microwave Diode on the Base of Ternary Al(x)Ga(1-x)As Semiconductor Compound |
title_full | Sensitive Planar Microwave Diode on the Base of Ternary Al(x)Ga(1-x)As Semiconductor Compound |
title_fullStr | Sensitive Planar Microwave Diode on the Base of Ternary Al(x)Ga(1-x)As Semiconductor Compound |
title_full_unstemmed | Sensitive Planar Microwave Diode on the Base of Ternary Al(x)Ga(1-x)As Semiconductor Compound |
title_short | Sensitive Planar Microwave Diode on the Base of Ternary Al(x)Ga(1-x)As Semiconductor Compound |
title_sort | sensitive planar microwave diode on the base of ternary al(x)ga(1-x)as semiconductor compound |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8271366/ https://www.ncbi.nlm.nih.gov/pubmed/34209095 http://dx.doi.org/10.3390/s21134487 |
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