The Effects of Temperature on the Growth of a Lead-Free Perovskite-Like (CH(3)NH(3))(3)Sb(2)Br(9) Single Crystal for An MSM Photodetector Application

We have fabricated a photodetector based on (CH(3)NH(3))(3)Sb(2)Br(9) (MA(3)Sb(2)Br(9)) lead-free perovskite-like single crystal, which plays an important role in the optoelectronic characteristics of the photodetector as a perovskite-like photosensitive layer. Here, MA(3)Sb(2)Br(9) single crystals were synthesized by an inverse temperature crystallization process with a precursor solution at three different growth temperatures, 60 °C, 80 °C, and 100 °C. As a result, a MA(3)Sb(2)Br(9) single crystal with an optimum growth temperature of 60 °C presented a low trap density of 2.63 × 10(11) cm(−3), a high charge carrier mobility of 0.75 cm(2) V(−1) s(−1), and excellent crystal structure and optical absorption properties. This MA(3)Sb(2)Br(9) perovskite-like photodetector displayed a low dark current of 8.09 × 10(−9) A, high responsivity of 0.113 A W(−1), and high detectivity of 4.32 × 10(11) Jones.