Cargando…

Optimized Aluminum Reflector for Enhancement of UVC Cathodoluminescence Based-AlGaN Materials with Carbon Nanotube Field Emitters

The far ultraviolet C (UVC) light sources based on carbon nanotube (CNT) field emitters as excitation sources have become promising light sources for sterilization, disinfection, and water purification. However, the low light extraction efficiency of UVC–CNT light sources still hinders the practical...

Descripción completa

Detalles Bibliográficos
Autores principales:	Mohan, Manoj Kumar Chandra, Shim, Sang Kyun, Lee, June Key, Jang, Nakwon, Lee, Naesung, Tawfik, Wael Z.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8271809/ https://www.ncbi.nlm.nih.gov/pubmed/34209406 http://dx.doi.org/10.3390/molecules26134025

Ejemplares similares

Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors
por: Griffin, Peter, et al.
Publicado: (2018)

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
por: Fan, Feng-Hsu, et al.
Publicado: (2017)

Hillock Related Degradation Mechanism for AlGaN-Based UVC LEDs
por: Chen, Juntong, et al.
Publicado: (2023)

Ultraviolet-C AlGaN Resonant-Cavity Light-Emitting Diodes with Thermal Stability Pipe-AlGaN-Distributed Bragg Reflectors
por: Chen, Kuei-Ting, et al.
Publicado: (2023)

Light interaction in sapphire/MgF(2)/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes
por: Lee, Keon Hwa, et al.
Publicado: (2015)

Electron-Beam-Pumped UVC Emitters Based on an (Al,Ga)N Material System
por: Jmerik, Valentin, et al.
Publicado: (2023)

Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors
por: Lu, Xingdong, et al.
Publicado: (2019)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
por: Chang, Tzu-Hsuan, et al.
Publicado: (2017)

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
por: Che, Jiamang, et al.
Publicado: (2018)

Cathodoluminescence Spectroscopy in Graded In(x)Ga(1−x)N
por: Zhao, Xiaofang, et al.
Publicado: (2022)

The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface
por: Podlipskas, Žydrūnas, et al.
Publicado: (2019)

Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs
por: Kaushik, Pragyey Kumar, et al.
Publicado: (2021)

High-Quality Crystal Growth and Characteristics of AlGaN-Based Solar-Blind Distributed Bragg Reflectors with a Tri-layer Period Structure
por: Chang, Jianjun, et al.
Publicado: (2016)

Fabrication of wafer-scale nanoporous AlGaN-based deep ultraviolet distributed Bragg reflectors via one-step selective wet etching
por: Zhao, Yongming, et al.
Publicado: (2022)

Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect
por: Chen, Yuxuan, et al.
Publicado: (2023)

Graphene/AlGaN/GaN RF Switch
por: Yashchyshyn, Yevhen, et al.
Publicado: (2021)

AlGaN/GaN FETs looms over GaAs technology
Publicado: (2003)

Room Temperature Operation of UV Photocatalytic Functionalized AlGaN/GaN Heterostructure Hydrogen Sensor
por: Choi, June-Heang, et al.
Publicado: (2021)

Formation of quantum dots in GaN/AlGaN FETs
por: Otsuka, Tomohiro, et al.
Publicado: (2020)

Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure
por: Chen, Chi-Chung, et al.
Publicado: (2021)

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
por: Wu, Tian-Li, et al.
Publicado: (2020)

Hexagonal GaN nanorod-based photonic crystal slab as simultaneous yellow broadband reflector and blue emitter for phosphor-conversion white light emitting devices
por: Ko, Suk-Min, et al.
Publicado: (2020)

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
por: Baek, Seung-Hye, et al.
Publicado: (2021)

2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters
por: Jmerik, Valentin, et al.
Publicado: (2023)

The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor
por: Zhang, Hanyuan, et al.
Publicado: (2020)

Optimization AlGaN/GaN HEMT with Field Plate Structures
por: Shi, Ningping, et al.
Publicado: (2022)

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
por: Kang, Soo Cheol, et al.
Publicado: (2020)

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition
por: Cheng, Jianpeng, et al.
Publicado: (2016)

Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature
por: Vuong, Tuan-Anh, et al.
Publicado: (2021)

Fundamental Limit of Plasmonic Cathodoluminescence
por: Schmidt, Franz-Philipp, et al.
Publicado: (2020)

Miniaturized GaAs Nanowire Laser with a Metal Grating Reflector
por: Wei, Wei, et al.
Publicado: (2020)

Anisotropic properties of pipe-GaN distributed Bragg reflectors
por: Wu, Chia-Jung, et al.
Publicado: (2020)

High Temperature AlGaN/GaN Membrane Based Pressure Sensors
por: Gajula, Durga, et al.
Publicado: (2018)

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
por: Dub, Maksym, et al.
Publicado: (2020)

A Novel Bidirectional AlGaN/GaN ESD Protection Diode
por: Yao, Bin, et al.
Publicado: (2022)

Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT
por: Liu, Censong, et al.
Publicado: (2023)

A modelling study of hole transport in GaN/AlGaN superlattices
por: Bai, Mengxun, et al.
Publicado: (2023)

Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging
por: Kusch, Gunnar, et al.
Publicado: (2018)

Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions
por: Choi, June-Heang, et al.
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_jtpkt4bhomti36o0f8vvj8vtn5