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Upstream modes and antidots poison graphene quantum Hall effect

The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to reveal new facets of this remarkable property. However, in...

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Autores principales: Moreau, N., Brun, B., Somanchi, S., Watanabe, K., Taniguchi, T., Stampfer, C., Hackens, B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8275581/
https://www.ncbi.nlm.nih.gov/pubmed/34253725
http://dx.doi.org/10.1038/s41467-021-24481-2
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author Moreau, N.
Brun, B.
Somanchi, S.
Watanabe, K.
Taniguchi, T.
Stampfer, C.
Hackens, B.
author_facet Moreau, N.
Brun, B.
Somanchi, S.
Watanabe, K.
Taniguchi, T.
Stampfer, C.
Hackens, B.
author_sort Moreau, N.
collection PubMed
description The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to reveal new facets of this remarkable property. However, in conventional Hall bar geometries, topological protection of graphene edge channels is found regrettably less robust than in high mobility semi-conductors. Here, we explore graphene quantum Hall regime at the local scale, using a scanning gate microscope. We reveal the detrimental influence of antidots along the graphene edges, mediating backscattering towards upstream edge channels, hence triggering topological breakdown. Combined with simulations, our experimental results provide further insights into graphene quantum Hall channels vulnerability. In turn, this may ease future developments towards precise manipulation of topologically protected edge channels hosted in various types of two-dimensional crystals.
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spelling pubmed-82755812021-07-20 Upstream modes and antidots poison graphene quantum Hall effect Moreau, N. Brun, B. Somanchi, S. Watanabe, K. Taniguchi, T. Stampfer, C. Hackens, B. Nat Commun Article The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to reveal new facets of this remarkable property. However, in conventional Hall bar geometries, topological protection of graphene edge channels is found regrettably less robust than in high mobility semi-conductors. Here, we explore graphene quantum Hall regime at the local scale, using a scanning gate microscope. We reveal the detrimental influence of antidots along the graphene edges, mediating backscattering towards upstream edge channels, hence triggering topological breakdown. Combined with simulations, our experimental results provide further insights into graphene quantum Hall channels vulnerability. In turn, this may ease future developments towards precise manipulation of topologically protected edge channels hosted in various types of two-dimensional crystals. Nature Publishing Group UK 2021-07-12 /pmc/articles/PMC8275581/ /pubmed/34253725 http://dx.doi.org/10.1038/s41467-021-24481-2 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Moreau, N.
Brun, B.
Somanchi, S.
Watanabe, K.
Taniguchi, T.
Stampfer, C.
Hackens, B.
Upstream modes and antidots poison graphene quantum Hall effect
title Upstream modes and antidots poison graphene quantum Hall effect
title_full Upstream modes and antidots poison graphene quantum Hall effect
title_fullStr Upstream modes and antidots poison graphene quantum Hall effect
title_full_unstemmed Upstream modes and antidots poison graphene quantum Hall effect
title_short Upstream modes and antidots poison graphene quantum Hall effect
title_sort upstream modes and antidots poison graphene quantum hall effect
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8275581/
https://www.ncbi.nlm.nih.gov/pubmed/34253725
http://dx.doi.org/10.1038/s41467-021-24481-2
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