Cargando…

Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) in the field of spintronics have received enormous attention owing to their fascinating spin phenomena for fundamental physics and potential applications. MTJs exhibit a large tunnel magnetoresistance (TMR) at room temperature. However, TMR depends strongly on the bi...

Descripción completa

Detalles Bibliográficos
Autores principales: Ogata, Kentaro, Nakayama, Yusuke, Xiao, Gang, Kaiju, Hideo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8275788/
https://www.ncbi.nlm.nih.gov/pubmed/34253744
http://dx.doi.org/10.1038/s41598-021-93226-4
_version_ 1783721780212400128
author Ogata, Kentaro
Nakayama, Yusuke
Xiao, Gang
Kaiju, Hideo
author_facet Ogata, Kentaro
Nakayama, Yusuke
Xiao, Gang
Kaiju, Hideo
author_sort Ogata, Kentaro
collection PubMed
description Magnetic tunnel junctions (MTJs) in the field of spintronics have received enormous attention owing to their fascinating spin phenomena for fundamental physics and potential applications. MTJs exhibit a large tunnel magnetoresistance (TMR) at room temperature. However, TMR depends strongly on the bias voltage, which reduces the magnitude of TMR. On the other hand, tunnel magnetocapacitance (TMC), which has also been observed in MTJs, can be increased when subjecting to a biasing voltage, thus exhibiting one of the most interesting spin phenomena. Here we report a large voltage-induced TMC beyond 330% in MgO-based MTJs, which is the largest value ever reported for MTJs. The voltage dependence and frequency characteristics of TMC can be explained by the newly proposed Debye-Fröhlich model using Zhang-sigmoid theory, parabolic barrier approximation, and spin-dependent drift diffusion model. Moreover, we predict that the voltage-induced TMC ratio could reach over 3000% in MTJs. It is a reality now that MTJs can be used as capacitors that are small in size, broadly ranged in frequencies and controllable by a voltage. Our theoretical and experimental findings provide a deeper understanding on the exact mechanism of voltage-induced AC spin transports in spintronic devices. Our research may open new avenues to the development of spintronics applications, such as highly sensitive magnetic sensors, high performance non-volatile memories, multi-functional spin logic devices, voltage controlled electronic components, and energy storage devices.
format Online
Article
Text
id pubmed-8275788
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-82757882021-07-13 Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions Ogata, Kentaro Nakayama, Yusuke Xiao, Gang Kaiju, Hideo Sci Rep Article Magnetic tunnel junctions (MTJs) in the field of spintronics have received enormous attention owing to their fascinating spin phenomena for fundamental physics and potential applications. MTJs exhibit a large tunnel magnetoresistance (TMR) at room temperature. However, TMR depends strongly on the bias voltage, which reduces the magnitude of TMR. On the other hand, tunnel magnetocapacitance (TMC), which has also been observed in MTJs, can be increased when subjecting to a biasing voltage, thus exhibiting one of the most interesting spin phenomena. Here we report a large voltage-induced TMC beyond 330% in MgO-based MTJs, which is the largest value ever reported for MTJs. The voltage dependence and frequency characteristics of TMC can be explained by the newly proposed Debye-Fröhlich model using Zhang-sigmoid theory, parabolic barrier approximation, and spin-dependent drift diffusion model. Moreover, we predict that the voltage-induced TMC ratio could reach over 3000% in MTJs. It is a reality now that MTJs can be used as capacitors that are small in size, broadly ranged in frequencies and controllable by a voltage. Our theoretical and experimental findings provide a deeper understanding on the exact mechanism of voltage-induced AC spin transports in spintronic devices. Our research may open new avenues to the development of spintronics applications, such as highly sensitive magnetic sensors, high performance non-volatile memories, multi-functional spin logic devices, voltage controlled electronic components, and energy storage devices. Nature Publishing Group UK 2021-07-12 /pmc/articles/PMC8275788/ /pubmed/34253744 http://dx.doi.org/10.1038/s41598-021-93226-4 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Ogata, Kentaro
Nakayama, Yusuke
Xiao, Gang
Kaiju, Hideo
Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
title Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
title_full Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
title_fullStr Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
title_full_unstemmed Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
title_short Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
title_sort observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in mgo-based magnetic tunnel junctions
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8275788/
https://www.ncbi.nlm.nih.gov/pubmed/34253744
http://dx.doi.org/10.1038/s41598-021-93226-4
work_keys_str_mv AT ogatakentaro observationandtheoreticalcalculationsofvoltageinducedlargemagnetocapacitancebeyond330inmgobasedmagnetictunneljunctions
AT nakayamayusuke observationandtheoreticalcalculationsofvoltageinducedlargemagnetocapacitancebeyond330inmgobasedmagnetictunneljunctions
AT xiaogang observationandtheoreticalcalculationsofvoltageinducedlargemagnetocapacitancebeyond330inmgobasedmagnetictunneljunctions
AT kaijuhideo observationandtheoreticalcalculationsofvoltageinducedlargemagnetocapacitancebeyond330inmgobasedmagnetictunneljunctions