Cargando…

High-yield parallel fabrication of quantum-dot monolayer single-electron devices displaying Coulomb staircase, contacted by graphene

It is challenging for conventional top-down lithography to fabricate reproducible devices very close to atomic dimensions, whereas identical molecules and very similar nanoparticles can be made bottom-up in large quantities, and can be self-assembled on surfaces. The challenge is to fabricate electr...

Descripción completa

Detalles Bibliográficos
Autores principales: Fruhman, Joel M., Astier, Hippolyte P.A.G., Ehrler, Bruno, Böhm, Marcus L., Eyre, Lissa F. L., Kidambi, Piran R., Sassi, Ugo, De Fazio, Domenico, Griffiths, Jonathan P., Robson, Alexander J., Robinson, Benjamin J., Hofmann, Stephan, Ferrari, Andrea C., Ford, Christopher J. B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8280191/
https://www.ncbi.nlm.nih.gov/pubmed/34262029
http://dx.doi.org/10.1038/s41467-021-24233-2
_version_ 1783722600289009664
author Fruhman, Joel M.
Astier, Hippolyte P.A.G.
Ehrler, Bruno
Böhm, Marcus L.
Eyre, Lissa F. L.
Kidambi, Piran R.
Sassi, Ugo
De Fazio, Domenico
Griffiths, Jonathan P.
Robson, Alexander J.
Robinson, Benjamin J.
Hofmann, Stephan
Ferrari, Andrea C.
Ford, Christopher J. B.
author_facet Fruhman, Joel M.
Astier, Hippolyte P.A.G.
Ehrler, Bruno
Böhm, Marcus L.
Eyre, Lissa F. L.
Kidambi, Piran R.
Sassi, Ugo
De Fazio, Domenico
Griffiths, Jonathan P.
Robson, Alexander J.
Robinson, Benjamin J.
Hofmann, Stephan
Ferrari, Andrea C.
Ford, Christopher J. B.
author_sort Fruhman, Joel M.
collection PubMed
description It is challenging for conventional top-down lithography to fabricate reproducible devices very close to atomic dimensions, whereas identical molecules and very similar nanoparticles can be made bottom-up in large quantities, and can be self-assembled on surfaces. The challenge is to fabricate electrical contacts to many such small objects at the same time, so that nanocrystals and molecules can be incorporated into conventional integrated circuits. Here, we report a scalable method for contacting a self-assembled monolayer of nanoparticles with a single layer of graphene. This produces single-electron effects, in the form of a Coulomb staircase, with a yield of 87 ± 13% in device areas ranging from < 800 nm(2) to 16 μm(2), containing up to 650,000 nanoparticles. Our technique offers scalable assembly of ultra-high densities of functional particles or molecules that could be used in electronic integrated circuits, as memories, switches, sensors or thermoelectric generators.
format Online
Article
Text
id pubmed-8280191
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-82801912021-07-23 High-yield parallel fabrication of quantum-dot monolayer single-electron devices displaying Coulomb staircase, contacted by graphene Fruhman, Joel M. Astier, Hippolyte P.A.G. Ehrler, Bruno Böhm, Marcus L. Eyre, Lissa F. L. Kidambi, Piran R. Sassi, Ugo De Fazio, Domenico Griffiths, Jonathan P. Robson, Alexander J. Robinson, Benjamin J. Hofmann, Stephan Ferrari, Andrea C. Ford, Christopher J. B. Nat Commun Article It is challenging for conventional top-down lithography to fabricate reproducible devices very close to atomic dimensions, whereas identical molecules and very similar nanoparticles can be made bottom-up in large quantities, and can be self-assembled on surfaces. The challenge is to fabricate electrical contacts to many such small objects at the same time, so that nanocrystals and molecules can be incorporated into conventional integrated circuits. Here, we report a scalable method for contacting a self-assembled monolayer of nanoparticles with a single layer of graphene. This produces single-electron effects, in the form of a Coulomb staircase, with a yield of 87 ± 13% in device areas ranging from < 800 nm(2) to 16 μm(2), containing up to 650,000 nanoparticles. Our technique offers scalable assembly of ultra-high densities of functional particles or molecules that could be used in electronic integrated circuits, as memories, switches, sensors or thermoelectric generators. Nature Publishing Group UK 2021-07-14 /pmc/articles/PMC8280191/ /pubmed/34262029 http://dx.doi.org/10.1038/s41467-021-24233-2 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Fruhman, Joel M.
Astier, Hippolyte P.A.G.
Ehrler, Bruno
Böhm, Marcus L.
Eyre, Lissa F. L.
Kidambi, Piran R.
Sassi, Ugo
De Fazio, Domenico
Griffiths, Jonathan P.
Robson, Alexander J.
Robinson, Benjamin J.
Hofmann, Stephan
Ferrari, Andrea C.
Ford, Christopher J. B.
High-yield parallel fabrication of quantum-dot monolayer single-electron devices displaying Coulomb staircase, contacted by graphene
title High-yield parallel fabrication of quantum-dot monolayer single-electron devices displaying Coulomb staircase, contacted by graphene
title_full High-yield parallel fabrication of quantum-dot monolayer single-electron devices displaying Coulomb staircase, contacted by graphene
title_fullStr High-yield parallel fabrication of quantum-dot monolayer single-electron devices displaying Coulomb staircase, contacted by graphene
title_full_unstemmed High-yield parallel fabrication of quantum-dot monolayer single-electron devices displaying Coulomb staircase, contacted by graphene
title_short High-yield parallel fabrication of quantum-dot monolayer single-electron devices displaying Coulomb staircase, contacted by graphene
title_sort high-yield parallel fabrication of quantum-dot monolayer single-electron devices displaying coulomb staircase, contacted by graphene
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8280191/
https://www.ncbi.nlm.nih.gov/pubmed/34262029
http://dx.doi.org/10.1038/s41467-021-24233-2
work_keys_str_mv AT fruhmanjoelm highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT astierhippolytepag highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT ehrlerbruno highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT bohmmarcusl highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT eyrelissafl highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT kidambipiranr highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT sassiugo highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT defaziodomenico highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT griffithsjonathanp highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT robsonalexanderj highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT robinsonbenjaminj highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT hofmannstephan highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT ferrariandreac highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene
AT fordchristopherjb highyieldparallelfabricationofquantumdotmonolayersingleelectrondevicesdisplayingcoulombstaircasecontactedbygraphene