Bandgap control in two-dimensional semiconductors via coherent doping of plasmonic hot electrons

Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate a widely tunable bandgap (renormalisation up to 550 meV at room-temperature) in two-dimens...

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Detalles Bibliográficos
Autores principales: Chen, Yu-Hui, Tamming, Ronnie R., Chen, Kai, Zhang, Zhepeng, Liu, Fengjiang, Zhang, Yanfeng, Hodgkiss, Justin M., Blaikie, Richard J., Ding, Boyang, Qiu, Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8282635/
https://www.ncbi.nlm.nih.gov/pubmed/34267218
http://dx.doi.org/10.1038/s41467-021-24667-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8282635/
https://www.ncbi.nlm.nih.gov/pubmed/34267218
http://dx.doi.org/10.1038/s41467-021-24667-8

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