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Bandgap control in two-dimensional semiconductors via coherent doping of plasmonic hot electrons
Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate a widely tunable bandgap (renormalisation up to 550 meV at room-temperature) in two-dimens...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8282635/ https://www.ncbi.nlm.nih.gov/pubmed/34267218 http://dx.doi.org/10.1038/s41467-021-24667-8 |