Exploring Area-Dependent Pr(0.7)Ca(0.3)MnO(3)-Based Memristive Devices as Synapses in Spiking and Artificial Neural Networks

Memristive devices are novel electronic devices, which resistance can be tuned by an external voltage in a non-volatile way. Due to their analog resistive switching behavior, they are considered to emulate the behavior of synapses in neuronal networks. In this work, we investigate memristive devices...

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Detalles Bibliográficos
Autores principales: Gutsche, Alexander, Siegel, Sebastian, Zhang, Jinchao, Hambsch, Sebastian, Dittmann, Regina
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2021
Materias:
Neuroscience
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8282906/
https://www.ncbi.nlm.nih.gov/pubmed/34276286
http://dx.doi.org/10.3389/fnins.2021.661261

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8282906/
https://www.ncbi.nlm.nih.gov/pubmed/34276286
http://dx.doi.org/10.3389/fnins.2021.661261

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