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Superconducting Contacts to a Monolayer Semiconductor
[Image: see text] We demonstrate superconducting vertical interconnect access (VIA) contacts to a monolayer of molybdenum disulfide (MoS(2)), a layered semiconductor with highly relevant electronic and optical properties. As a contact material we use MoRe, a superconductor with a high critical magne...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2021
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8283752/ https://www.ncbi.nlm.nih.gov/pubmed/34161104 http://dx.doi.org/10.1021/acs.nanolett.1c00615 |
Sumario: | [Image: see text] We demonstrate superconducting vertical interconnect access (VIA) contacts to a monolayer of molybdenum disulfide (MoS(2)), a layered semiconductor with highly relevant electronic and optical properties. As a contact material we use MoRe, a superconductor with a high critical magnetic field and high critical temperature. The electron transport is mostly dominated by a single superconductor/normal conductor junction with a clear superconductor gap. In addition, we find MoS(2) regions that are strongly coupled to the superconductor, resulting in resonant Andreev tunneling and junction-dependent gap characteristics, suggesting a superconducting proximity effect. Magnetoresistance measurements show that the bandstructure and the high intrinsic carrier mobility remain intact in the bulk of the MoS(2). This type of VIA contact is applicable to a large variety of layered materials and superconducting contacts, opening up a path to monolayer semiconductors as a platform for superconducting hybrid devices. |
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