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Origin of light instability in amorphous IGZO thin-film transistors and its suppression

Radiating amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) with deep ultraviolet light (λ = 175 nm) is found to induce rigid negative threshold-voltage shift, as well as a subthreshold hump and an increase in subthreshold-voltage slope. These changes are attributed to the photo creation an...

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Detalles Bibliográficos
Autores principales:	Mativenga, Mallory, Haque, Farjana, Billah, Mohammad Masum, Um, Jae Gwang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8285384/ https://www.ncbi.nlm.nih.gov/pubmed/34272454 http://dx.doi.org/10.1038/s41598-021-94078-8

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