3D Seed-Germination-Like MXene with In Situ Growing CNTs/Ni Heterojunction for Enhanced Microwave Absorption via Polarization and Magnetization

Benefiting from the possible “seed-germination” effect, the “seeds” Ni(2+) grow into “buds” Ni nanoparticles and “stem” carbon nanotubes (CNTs) from the enlarged “soil” of MXene skeleton. Compared with the traditional magnetic agglomeration, the MXene-CNTs/Ni hybrids exhibit the highly spatial dispersed magnetic architecture. 3D MXene-CNTs/Ni composites hold excellent microwave absorption performance (−56.4 dB at only 2.4 mm). ABSTRACT: Ti(3)C(2)T(x) MXene is widely regarded as a potential microwave absorber due to its dielectric multi-layered structure. However, missing magnetic loss capability of pure MXene leads to the unmatched electromagnetic parameters and unsatisfied impedance matching condition. Herein, with the inspiration from dielectric-magnetic synergy, this obstruction is solved by fabricating magnetic CNTs/Ni hetero-structure decorated MXene substrate via a facile in situ induced growth method. Ni(2+) ions are successfully attached on the surface and interlamination of each MXene unit by intensive electrostatic adsorption. Benefiting from the possible “seed-germination” effect, the “seeds” Ni(2+) grow into “buds” Ni nanoparticles and “stem” carbon nanotubes (CNTs) from the enlarged “soil” of MXene skeleton. Due to the improved impedance matching condition, the MXene-CNTs/Ni hybrid holds a superior microwave absorption performance of − 56.4 dB at only 2.4 mm thickness. Such a distinctive 3D architecture endows the hybrids: (i) a large-scale 3D magnetic coupling network in each dielectric unit that leading to the enhanced magnetic loss capability, (ii) a massive multi-heterojunction interface structure that resulting in the reinforced polarization loss capability, confirmed by the off-axis electron holography. These outstanding results provide novel ideas for developing magnetic MXene-based absorbers. [Image: see text] SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1007/s40820-021-00680-w.