High-Mobility Free-Standing InSb Nanoflags Grown on InP Nanowire Stems for Quantum Devices

[Image: see text] High-quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize because of the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks...

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Detalles Bibliográficos
Autores principales: Verma, Isha, Salimian, Sedighe, Zannier, Valentina, Heun, Stefan, Rossi, Francesca, Ercolani, Daniele, Beltram, Fabio, Sorba, Lucia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8291043/
https://www.ncbi.nlm.nih.gov/pubmed/34308268
http://dx.doi.org/10.1021/acsanm.1c00734

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8291043/
https://www.ncbi.nlm.nih.gov/pubmed/34308268
http://dx.doi.org/10.1021/acsanm.1c00734

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