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High-Mobility Free-Standing InSb Nanoflags Grown on InP Nanowire Stems for Quantum Devices
[Image: see text] High-quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize because of the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical
Society
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8291043/ https://www.ncbi.nlm.nih.gov/pubmed/34308268 http://dx.doi.org/10.1021/acsanm.1c00734 |