Cargando…

Fabrication of Graphoepitaxial Gate-All-Around Si Circuitry Patterned Nanowire Arrays Using Block Copolymer Assisted Hard Mask Approach

[Image: see text] We demonstrate the fabrication of sub-20 nm gate-all-around silicon (Si) nanowire field effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a block-copolymer-assisted hard mask approach was utilized using a topographically patterned substrat...

Descripción completa

Detalles Bibliográficos
Autores principales: Ghoshal, Tandra, Senthamaraikannan, Ramsankar, Shaw, Matthew T., Lundy, Ross, Selkirk, Andrew, Morris, Michael A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8291765/
https://www.ncbi.nlm.nih.gov/pubmed/34042425
http://dx.doi.org/10.1021/acsnano.0c09232

Ejemplares similares