Cargando…
Fabrication of Graphoepitaxial Gate-All-Around Si Circuitry Patterned Nanowire Arrays Using Block Copolymer Assisted Hard Mask Approach
[Image: see text] We demonstrate the fabrication of sub-20 nm gate-all-around silicon (Si) nanowire field effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a block-copolymer-assisted hard mask approach was utilized using a topographically patterned substrat...
Autores principales: | Ghoshal, Tandra, Senthamaraikannan, Ramsankar, Shaw, Matthew T., Lundy, Ross, Selkirk, Andrew, Morris, Michael A. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American
Chemical Society
2021
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8291765/ https://www.ncbi.nlm.nih.gov/pubmed/34042425 http://dx.doi.org/10.1021/acsnano.0c09232 |
Ejemplares similares
-
Size and space controlled hexagonal arrays of superparamagnetic iron oxide nanodots: magnetic studies and application
por: Ghoshal, Tandra, et al.
Publicado: (2013) -
A Highly Efficient Sensor Platform Using Simply Manufactured Nanodot Patterned Substrates
por: Rasappa, Sozaraj, et al.
Publicado: (2015) -
Large-Area Fabrication of Vertical Silicon Nanotube
Arrays via Toroidal Micelle Self-Assembly
por: Prochukhan, Nadezda, et al.
Publicado: (2021) -
Sub-25 nm Inorganic and Dielectric Nanopattern Arrays
on Substrates: A Block Copolymer-Assisted Lithography
por: Ghoshal, Tandra, et al.
Publicado: (2021) -
Drawing Circuits with Carbon Nanotubes: Scratch-Induced Graphoepitaxial Growth of Carbon Nanotubes on Amorphous Silicon Oxide Substrates
por: Choi, Won Jin, et al.
Publicado: (2014)