Marginal metallic state at a fractional filling of ’8/5’ and ’4/3’ of Landau levels in the GaAs/AlGaAs 2D electron system

A metallic state with a vanishing activation gap, at a filling factor [Formula: see text] in the untilted specimen with [Formula: see text] , and at [Formula: see text] at [Formula: see text] under a [Formula: see text] tilted magnetic field, is examined through a microwave photo-excited transport study of the GaAs/AlGaAs 2 dimensional electron system (2DES). The results presented here suggest, remarkably, that at the possible degeneracy point of states with different spin polarization, where the 8/5 or 4/3 FQHE vanish, there occurs a peculiar marginal metallic state that differs qualitatively from a quantum Hall insulating state and the usual quantum Hall metallic state. Such a marginal metallic state occurs most prominently at [Formula: see text] , and at [Formula: see text] under tilt as mentioned above, over the interval [Formula: see text] , that also includes the [Formula: see text] state, which appears perceptibly gapped in the first instance.