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Catalytic Adsorptive Stripping Voltammetric Determination of Germanium Employing the Oxidizing Properties of V(IV)-HEDTA Complex and Bismuth-Modified Carbon-Based Electrodes

An efficient procedure that may be used to determine germanium traces and combines the advantages of catalytic adsorptive stripping voltammetry (CAdSV) with the convenience of screen-printed electrodes was developed. To induce the CAdSV response of the germanium(IV)-catechol complex, the vanadium(IV...

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Detalles Bibliográficos
Autores principales: Królicka, Agnieszka, Zarębski, Jerzy, Bobrowski, Andrzej
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8308015/
https://www.ncbi.nlm.nih.gov/pubmed/34357176
http://dx.doi.org/10.3390/membranes11070524
Descripción
Sumario:An efficient procedure that may be used to determine germanium traces and combines the advantages of catalytic adsorptive stripping voltammetry (CAdSV) with the convenience of screen-printed electrodes was developed. To induce the CAdSV response of the germanium(IV)-catechol complex, the vanadium(IV)-HEDTA compound was employed in combination with various bismuth-modified homogeneous (glassy carbon, gold coated with a bismuth layer via physical vapor deposition) and heterogeneous (screen-printed carbon, mesoporous carbon, graphene and reduced graphene oxide, polymer-encapsuled carbon fiber) electrodes. This solution had never before been implemented for this purpose. To achieve the most favorable performance of the working electrode, the parameters of bismuth deposition were optimized using a central composite design methodology. SEM imaging and contact angle measurements confirmed the long-term stability and high chemical resistance of the electrodes against the oxidizing action of V(IV)-HEDTA. Under optimized conditions, the method made it possible to detect nanomolar concentrations of germanium with favorable detection limits, high sensitivity, and a wide linear range of 5–90 nM of Ge(IV).