Microwave-Assisted Synthesis of Bi(2)S(3) and Sb(2)S(3) Nanoparticles and Their Photoelectrochemical Properties

[Image: see text] Bi(2)S(3) and Sb(2)S(3) nanoparticles were prepared by microwave irradiation of single-source precursor complexes in the presence of ethylene glycol as a coordinating solvent. The as-synthesized nanoparticles were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) coupled with energy-dispersive X-ray (EDX), photoluminescence (PL), and UV–vis near-infrared (NIR) spectroscopy. Their electrochemical potential was examined in [Fe(CN)](4–)/[Fe(CN)](3–) by cyclic and square wave voltammetry (CV and SWV) and electrochemical impedance spectroscopy (EIS). GCEBi(2)S(3) and GCESb(2)S(3) exhibit promising electrochemical performance and a higher specific capacitance of about 700–800 F/g in [Fe(CN)](4–)/[Fe(CN)](3). Thin films of Bi(2)S(3) and Sb(2)S(3) were successfully incorporated in the fabrication of solar cell devices. The fabricated device using Bi(2)S(3) (under 100 mW/cm(2)) showed a power conversion efficiency (PCE) of 0.39%, with a V(oc) of 0.96 V, a J(sc) of 0.00228 mA/cm(2), and an FF of 44%. In addition, the device exhibits nonlinear current density–voltage characteristics, indicating that Bi(2)S(3) was experiencing a Schottky contact. The Sb(2)S(3)-based solar cell device showed no connection in the dark and under illumination. Therefore, no efficiency was recorded for the device using Sb(2)S(3), which indicated the ohmic nature of the film. This might be due to the current leakage caused by poor coverage. The nanoparticles were found to induce similar responses to the conventional semiconductor nanomaterials in relation to photoelectrochemistry. The present study indicates that Bi(2)S(3) and Sb(2)S(3) nanoparticles are promising semiconductor materials for developing optoelectronic and electrochemical devices as the films experience Schottky and Ohmic contacts.