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Graphene-based THz absorber: adjustability via multiple gate biasing

A multi-layer absorber using multi-bias arrays of graphene is proposed. The design methodology using the equivalent circuit model and matching concept is described. A heavy optimization process is performed to optimize bias values for different functionality. Leveraging, increased control parameters...

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Detalles Bibliográficos
Autores principales: Cyrus, Sindokht, Biabanifard, Sadegh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8326358/
https://www.ncbi.nlm.nih.gov/pubmed/34368484
http://dx.doi.org/10.1016/j.heliyon.2021.e07633
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author Cyrus, Sindokht
Biabanifard, Sadegh
author_facet Cyrus, Sindokht
Biabanifard, Sadegh
author_sort Cyrus, Sindokht
collection PubMed
description A multi-layer absorber using multi-bias arrays of graphene is proposed. The design methodology using the equivalent circuit model and matching concept is described. A heavy optimization process is performed to optimize bias values for different functionality. Leveraging, increased control parameters due to multi-bias scheme and simple circuit model representation, two operational modes are achieved as wide-band and multi-band absorption. The proposed absorber can perfectly absorb THz incident waves between [Formula: see text] in wide-band mode while shows perfect absorption response in [Formula: see text] and [Formula: see text] in multi-band operational mode. Besides, response dependency to layers thicknesses, electron relaxation time, chemical potentials, and incident angle are reported to express acceptable sensitivity of the device. Such a reconfigurable absorber is in demand for several applications, ranging from medical imaging to indoor communication.
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spelling pubmed-83263582021-08-06 Graphene-based THz absorber: adjustability via multiple gate biasing Cyrus, Sindokht Biabanifard, Sadegh Heliyon Research Article A multi-layer absorber using multi-bias arrays of graphene is proposed. The design methodology using the equivalent circuit model and matching concept is described. A heavy optimization process is performed to optimize bias values for different functionality. Leveraging, increased control parameters due to multi-bias scheme and simple circuit model representation, two operational modes are achieved as wide-band and multi-band absorption. The proposed absorber can perfectly absorb THz incident waves between [Formula: see text] in wide-band mode while shows perfect absorption response in [Formula: see text] and [Formula: see text] in multi-band operational mode. Besides, response dependency to layers thicknesses, electron relaxation time, chemical potentials, and incident angle are reported to express acceptable sensitivity of the device. Such a reconfigurable absorber is in demand for several applications, ranging from medical imaging to indoor communication. Elsevier 2021-07-22 /pmc/articles/PMC8326358/ /pubmed/34368484 http://dx.doi.org/10.1016/j.heliyon.2021.e07633 Text en © 2021 The Author(s) https://creativecommons.org/licenses/by-nc-nd/4.0/This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Research Article
Cyrus, Sindokht
Biabanifard, Sadegh
Graphene-based THz absorber: adjustability via multiple gate biasing
title Graphene-based THz absorber: adjustability via multiple gate biasing
title_full Graphene-based THz absorber: adjustability via multiple gate biasing
title_fullStr Graphene-based THz absorber: adjustability via multiple gate biasing
title_full_unstemmed Graphene-based THz absorber: adjustability via multiple gate biasing
title_short Graphene-based THz absorber: adjustability via multiple gate biasing
title_sort graphene-based thz absorber: adjustability via multiple gate biasing
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8326358/
https://www.ncbi.nlm.nih.gov/pubmed/34368484
http://dx.doi.org/10.1016/j.heliyon.2021.e07633
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