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Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in Silicon

[Image: see text] The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the manipulation of surface atoms, but at a disadvantage...

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Detalles Bibliográficos
Autores principales: Markevich, Alexander, Hudak, Bethany M., Madsen, Jacob, Song, Jiaming, Snijders, Paul C., Lupini, Andrew R., Susi, Toma
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8327312/
https://www.ncbi.nlm.nih.gov/pubmed/34354792
http://dx.doi.org/10.1021/acs.jpcc.1c03549